Characterization of Nb-doped PZT (65/35/1) ferroelectric thin films deposited by pulsed laser ablation

• Type: Article in International Scientific Journal
• Date: 2008

Authors

Pereira, M (Author) Other; Boerasu, I (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Vacuum

Vol. 82

Pages: 1379-1382

ISSN: 0042-207X

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 1 Citation

Other information

Authenticus ID: P-003-X29

DOI: 10.1016/j.vacuum.2008.03.036

Abstract (EN): Using ceramic targets prepared by conventional way, based on the composition Pb-0.995(Zr0.65Ti0.35)(0.99)Nb0.01O3 + 4% mole PbO excess (PZTN), several ferroelectric films were deposited by pulsed laser ablation (PLA) technique on Pt (111) coated Si and MgO (100) substrates, using XeCl (308 nm) excimer laser. X-ray diffraction is used to characterize the produced perovskite phase (rhombohedral phase) as well as to evaluate the secondary phases and to describe the structural changes during annealing. The optical characteristics are measured in the UV-vis-near IR region. Also, ferroelectric hysteresis behaviour has been characterized by CV measurements.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4