Annealing effect on the photoluminescence of Ge-doped silica films

• Type: Article in International Scientific Journal
• Date: 2008

Authors

Rolo, AG (Author) Other; Chahboun, A (Author) Other; Conde, O (Author) Other; Vasilevskiy, MI (Author) Other; Gomes, MJM (Author) Other

Journal

Title: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Vol. 40

Pages: 674-679

ISSN: 1386-9477

Indexing

ISI Web of Knowledge - 5 Citations

Scopus - 7 Citations

Other information

Authenticus ID: P-004-4DE

DOI: 10.1016/j.physe.2007.09.144

Abstract (EN): SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6