Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

• Type: Article in International Scientific Journal
• Date: 2008

Authors

Levichev, S (Author) Other; Chahboun, A (Author) Other; Basa, P (Author) Other; Rolo, AG (Author) Other; Barradas, NP (Author) Other; Alves, E (Author) Other; Horvath, ZJ (Author) Other; Conde, O (Author) Other; Gomes, MJM (Author) Other

Journal

The Journal is awaiting validation by the Administrative Services.

Title: MICROELECTRONIC ENGINEERING

Vol. 85

Pages: 2374-2377

ISSN: 0167-9317

Indexing

ISI Web of Knowledge - 10 Citations

Scopus - 12 Citations

Other information

Authenticus ID: P-003-TNZ

DOI: 10.1016/j.mee.2008.09.003

Abstract (EN): Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler-Nordheim tunnelling and Poole-Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4