Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

• Type: Article in International Scientific Journal
• Date: 2011

Authors

Vieira, EMF (Author) Other; Pinto, SRC (Author) Other; Levichev, S (Author) Other; Rolo, AG (Author) Other; Chahboun, A (Author) Other; Buljan, M (Author) Other; Barradas, NP (Author) Other; Alves, E (Author) Other; Bernstorff, S (Author) Other; Conde, O (Author) Other; Gomes, MJM (Author) Other

Journal

The Journal is awaiting validation by the Administrative Services.

Title: MICROELECTRONIC ENGINEERING

Vol. 88

Pages: 509-513

ISSN: 0167-9317

Indexing

ISI Web of Knowledge - 6 Citations

Scopus - 7 Citations

Other information

Authenticus ID: P-002-SYE

DOI: 10.1016/j.mee.2010.10.016

Abstract (EN): Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF-magnetron sputtering technique with following annealing procedure at 800 degrees C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x similar to 0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5