Temperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix

• Type: Article in International Scientific Journal
• Date: 2009

Authors

Chahboun, A (Author) Other; Levichev, S (Author) Other; Rolo, AG (Author) Other; Conde, O (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Journal of Luminescence

Vol. 129

Pages: 1235-1238

ISSN: 0022-2313

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 2 Citations

Scopus - 2 Citations

Other information

Authenticus ID: P-003-FF7

DOI: 10.1016/j.jlumin.2009.06.007

Abstract (EN): In this work, CdSe nanocrystals (NCs) embedded in SiO2 matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4 +/- 1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO2 System showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4