Microstructure and photoluminescence of CdS-doped silica films grown by RF magnetron sputtering

• Type: Article in International Scientific Journal
• Date: 2002

Authors

Rolo, AG (Author) Other; Stepikhova, MV (Author) Other; Filonovich, SA (Author) Other; Ricolleau, C (Author) Other; Vasilevskiy, MI (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Physica Status Solidi (B): Basic Research

Vol. 232

Pages: 44-49

ISSN: 0370-1972

Publisher: Wiley-Blackwell

Indexing

ISI Web of Knowledge - 5 Citations

Scopus - 6 Citations

Other information

Authenticus ID: P-000-NXJ

DOI: 10.1002/1521-3951(200207)232:1<44::aid-pssb44>3.0.co;2-4

Abstract (EN): Silica films containing CdS nanometer-sized particles with semiconductor contents of 1-10% were produced by radio-frequency magnetron sputtering at room temperature with subsequent annealing. The mean diameter of the CdS nanocrystals (NCs) varied between 4 and 6 nm, with narrow size distribution. High-resolution transmission electron microscopy images obtained for low-semi conductor-fraction samples showed quite a homogeneous NC distribution inside the silica matrix while the high-concentration samples showed an agglomeration of NCs in a columnar structure The observed photoluminescence (PL) bands were correlated with the semiconductor concentration. Two intense PL bands, one near the band-gap energy and the other in the red, were ob served at low temperature for samples with low CdS fraction. The high-energy band was found to be Stokes shifted by some 200 meV with respect to the absorption edge at room temperature. Th samples with high CdS fraction only displayed a broad red emission band, which was attributed to interface states.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6