Characterization and modeling of resistive switching phenomena in IGZO devices

• Type: Article in International Scientific Journal
• Date: 2022

Authors

Carvalho, G (Author) Other; Pereira, ME (Author) Other; Silva, C (Author) Other; Deuermeier, J (Author) Other; Kiazadeh, A (Author) Other; Vítor Grade Tavares (Author) FEUP

Journal

Title: AIP Advances

Vol. 12

ISSN: 2158-3226

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 0 Citations

Scopus

Other information

Authenticus ID: P-00X-3FW

DOI: 10.1063/5.0098145

Abstract (EN): This study explores the resistive switching phenomena present in 4 mu m(2) amorphous Indium-Gallium-Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps. (C) 2022 Author(s).

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9