The influence of argon pressure and RF power on the growth of InP thin films

• Type: Article in International Scientific Journal
• Date: 2011

Authors

Chandra, GH (Author) Other; Perez P de la Cruz (Author) FCUP; ventura, j. (Author) REIT

Journal

Title: Semiconductor Science and Technology

Vol. 26

ISSN: 0268-1242

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 8 Citations

Scopus - 8 Citations

Other information

Authenticus ID: P-002-PQX

DOI: 10.1088/0268-1242/26/7/075017

Abstract (EN): Indium phosphide thin films were grown onto glass substrates by RF magnetron sputtering. In this paper, we present a study on the role of argon pressure and rf power on magnetron sputtered InP films. These sputtering parameters are shown to affect the deposition rate, structure, morphology, electrical and optical properties of InP films. Single-phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (1 1 1) were observed at an argon pressure of 0.4 Pa, by keeping the substrate temperature (448 K) and RF power (150 W) constant. Hall measurements indicated n-type conductivity in InP films. The optical absorption studies indicated a direct band gap of 1.35 eV.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 8