A simple and efficient parameter extraction procedure for physics based IGBT models

• Type: Article in International Conference Proceedings Book
• Date: 2004

Authors

Rui Filipe Marques Chibante (Author) FEUP; Armando Luís Sousa Araújo (Author) FEUP; Adriano da Silva Carvalho (Author) FEUP

Conference proceedings International

Title: EPE-PEMC, 11th International POWER ELECTRONICS and MOTION CONTROL Conference

Pages: 1-9

EPE-PEMC, 11th International POWER ELECTRONICS and MOTION CONTROL Conference

Riga, Latvia, 2 - 4 September 2004

Indexing

INSPEC

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

CORDIS: Technological sciences > Engineering > Electrical engineering

Other information

Abstract (EN): Extraction of parameters for models of power semiconductors is a need for researchers working with development of power circuits. One of the drawbacks of physics based models is how to extract the numerous parameters to describe the model. Different approaches have been taken, most of them cumbersome to be solved. This paper presents a simple and accurate method of parameter extraction for physics based IGBT models. The procedure, based on an optimization algorithm (simulated annealing), is easy to implement and is efficient for extraction of a large number of parameters needed for physics based IGBT models, only requiring some experimental points of DC and resistive load characteristics. It is validated by comparing experimental and simulated results, at various operating conditions, using a Finite Element, physics based, IGBT model.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9