A modular approach for modelling and simulation of semiconductor power devices

• Type: Article in International Conference Proceedings Book
• Date: 1998

Authors

Armando Araújo (Author) FEUP; Adriano Carvalho (Author) FEUP; Jorge Martins de Carvalho (Author) FEUP

Conference proceedings International

Title: Proceedings of the 24th IEEE Annual Conference of the IEEE Industrial Electronics Society (IECON'98)

Pages: 499-503

24th Conf. of the IEEE Industrial Electronics Society

Aachen, Germany, 31 - JANEIRO - 1998

Indexing

ISI Web of Science

Scopus

INSPEC

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

CORDIS: Technological sciences > Engineering > Electrical engineering

Other information

DOI: 10.1109/IECON.1998.724145

Abstract (EN): This paper presents a modular approach for the modeling and simulation of power semiconductor devices. The novelty of the method is the accurate description of the carrier distribution in the low doped zone using a modular circuit network. This is achieved through the variational reformulation of the ambipolar diffusion equation (ADE) with posterior approximate solution with a finite element approach. The obtained modular networks are dependent on the physical properties of the device being modeled (element widths, mobilities, lifetimes, dopings). In this manner the spacial variation of these parameters is easily implemented. Approaches to this modular construction can also be made with several types of finite elements. Modules for the others zones of the devices (emitters, narrow bases, MOS), as well as for the voltage drops, based on known approaches, are also presented. Semiconductor modeling is then made linking these various modules through the boundary conditions of the device. This enables easy construction of efficient circuits for semiconductor simulation. Results of the method for power p-i-n diodes and power bipolar junction transistors are presented.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5