Compensation of Temperature Effects on the Pull-In Voltage of Microstructures

• Type: Article in International Scientific Journal
• Date: 2004

Authors

Luis A. Rocha (Author) FEUP; E. Cretu (Author) Other; R. F. Wolffenbuttel (Author) Other

Journal

Title: Sensors and Actuators, A: Physical

Vol. 115

Pages: 351-356

ISSN: 0924-4247

Publisher: Elsevier

Other information

DOI: 10.1016/j.sna.2004.03.075

Abstract (EN): The pull-in voltage of a suspended microstructure has been investigated for use as on-chip voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive displacement measurement. The stability is affected by an initial parasitic charge build-up and a temperature sensitivity of -149 muV/K. A burn-in procedure is required to minimize the first effect. The temperature coefficient is compensated for by applying additional temperature dependent electrostatic energy to the micro structure. Devices fabricated in an epi-poly process and designed for a nominal pull-in voltage at 5 V have a measured value at 4.7424 V Drift becomes negligible after 120 h of operation. The temperature reproducibility is within the resolution of the readout at 100 muV over a temperature range between 20 and 60 degreesC. (C) 2004 Elsevier B.V. All rights reserved.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6