Using Finite Element Methods for the Modeling of Semiconductor Power Bipolar Devices

• Type: Article in International Conference Proceedings Book
• Date: 1996

Authors

Armando Araújo (Author) FEUP; Adriano Carvalho (Author) FEUP; Jorge Martins de Carvalho (Author) FEUP

Conference proceedings International

Title: Seminário Anual de Automação e Electrónica Indústria

Pages: 762-766

Seminário Anual de Automação e Electrónica Indústria

Saragoça, Espanha

Other information

Resumo (PT): This paper presents a method for the solution of the Ambipolar Diffusion Equation (ADE) with a Finite Element (FE) approach. The method enables the representation of the base region of power bipolar devices as combination of elementary two port networks with parameters that can vary in time and space. This allows the solution of this equation through an equivalent electrical network. The method can be implemented into any electrical circuit simulator becoming the core for power bipolar devices simulation. The application of the method in modeling power p-i-n Diodes is presented. The results from simulation with SPICE are then compared with known experiments.

Abstract (EN): This paper presents a method for the solution of the Ambipolar Diffusion Equation (ADE) with a Finite Element (FE) approach. The method enables the representation of the base region of power bipolar devices as combination of elementary two port networks with parameters that can vary in time and space. This allows the solution of this equation through an equivalent electrical network. The method can be implemented into any electrical circuit simulator becoming the core for power bipolar devices simulation. The application of the method in modeling power p-i-n Diodes is presented. The results from simulation with SPICE are then compared with known experiments.

Language: Portuguese

Type (Professor's evaluation): Scientific

No. of pages: 5