Resistive switching of silicon-silver thin film devices in flexible substrates

• Type: Article in International Scientific Journal
• Date: 2020

Authors

Dias, C (Author) FCUP; Leitao, DC (Author) Other; Freire, CSR (Author) Other; Gomes, HL (Author) Other; Cardoso, S (Author) Other; ventura, j. (Author) FCUP

Journal

Title: Nanotechnology

Vol. 31

ISSN: 0957-4484

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 4 Citations

Other information

Authenticus ID: P-00R-JBQ

DOI: 10.1088/1361-6528/ab5eb7

Abstract (EN): Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9