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Low temperature deposition of ferromagnetic Ni-Mn-Ga thin films from two different targets via Rf magnetron sputtering

Title
Low temperature deposition of ferromagnetic Ni-Mn-Ga thin films from two different targets via Rf magnetron sputtering
Type
Article in International Conference Proceedings Book
Year
2010
Authors
Lourenco, AC
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Figueiras, F
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Das, S
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amaral, j. s.
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G.N. Kakazei
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Karpinsky, DV
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Soares, N
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Peres, M
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Pereira, MJ
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Santos, NM
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Tavares, PB
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Sobolev, NA
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Amaral, VS
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Kholkin, AL
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Conference proceedings International
Pages: 101-106
2010 MRS Spring Meeting
San Francisco, CA, 5 April 2010 through 9 April 2010
Indexing
Other information
Authenticus ID: P-007-WQM
Abstract (EN): Low temperature (400°C) deposition of ferromagnetic Ni-Mn-Ga thin films is successfully performed via rf magnetron sputtering technique using co-deposition of two targets Ni50Mn50 and Ni 50Ga50 on sapphire (0001) and Si (100) substrates. The films are in part amorphous with significant degree of crystallinity. The obtained crystallographic structure is shown to be substrate-dependent. Films on both substrates are ferromagnetic at room temperature (Curie temperature ~ 332 K) demonstrating well-defined hysteresis loops, low coercivity (~ 100 Oe), and saturation magnetization of ~ 200 emu/cc. At low temperature (5 K), both films are characterized by increased magnetization and wider hysteresis loops with higher coercivity and remanent magnetization. The process is therefore effective in achieving the appropriate thermodynamic conditions to deposit thin films of the Ni-Mn-Ga austenitic phase (highly magnetic at room temperature) at relatively low substrate temperature without the need for post-deposition annealing or further thermal treatment, which is prerequisite for the device fabrication. © 2010 Materials Research Society.
Language: English
Type (Professor's evaluation): Scientific
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