In situ characterization of the p-Si/NH4F interface during dissolution in the current oscillations regime

• Type: Article in International Scientific Journal
• Date: 1998

Authors

Cattarin, S (Author) Other; Chazalviel, JN (Author) Other; C. Fonseca (Author) FEUP; Ozanam, F (Author) Other; Peter, LM (Author) Other; Schlichthorl, G (Author) Other; Stumper, J (Author) Other

Journal

Title: Journal of the Electrochemical Society

Vol. 145

Pages: 498-502

ISSN: 0013-4651

Publisher: Electrochemical Society, Inc.

Indexing

Scopus - 37 Citations

Other information

Authenticus ID: P-007-825

DOI: 10.1149/1.1838292

Abstract (EN): Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.

Language: English

Type (Professor's evaluation): Scientific