Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

• Type: Article in International Scientific Journal
• Date: 2016

Authors

Silva, JPB (Author) Other; Kamakshi, K (Author) Other; Sekhar, KC (Author) Other; Agostinho Moreira, JA (Author) FCUP; Almeida, A (Author) Other; Pereira, M (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Journal of Physics and Chemistry of Solids

Vol. 92

Pages: 7-10

ISSN: 0022-3697

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 14 Citations

Scopus - 14 Citations

Other information

Authenticus ID: P-00K-3C6

DOI: 10.1016/j.jpcs.2016.01.012

Abstract (EN): In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (P-r) of 5.7 mu C/cm(2) and a coercive electric field (E-c) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4