Electrical switching of magnetization in a layer of alpha-Fe with a naturally hydroxidized surface

• Type: Article in International Scientific Journal
• Date: 2016

Authors

Dias, C (Author) Other; ventura, j. (Author) FCUP; araujo, j. p. (Author) FCUP; G.N. Kakazei (Author) FCUP; Lupo, P (Author) Other; Adeyeye, AO (Author) Other; Cardoso, S (Author) Other; Polushkin, NI (Author) Other; Duarte, AC (Author) Other; Conde, O (Author) Other; Bundaleski, N (Author) Other

Journal

Title: Journal of Materials Chemistry C

Vol. 4

Pages: 7751-7755

ISSN: 2050-7526

Publisher: Royal Society of Chemistry

Indexing

ISI Web of Knowledge - 2 Citations

Scopus - 2 Citations

Other information

Authenticus ID: P-00K-TBR

DOI: 10.1039/c6tc00700g

Abstract (EN): It is well established that electrical methods, such as the application of a high-density (10(10)-10(11) A m(-2)) current, can be employed for the switching of magnetization in thin ferromagnetic films and hetero-structures after their patterning at the nanoscale. We find that magnetization is robustly switchable, i.e., at macroscopic scales (up to a few millimeters in lateral directions), in a single similar to 30 nm-thick layer of alpha-Fe upon discharging a capacitor through the sample. Interestingly, samples sputtered at enhanced base pressures (similar to 10(-6) mbar) exhibited much lower switching thresholds with no bias field, while their electrical conductivity is anomalously high ( higher than that in bulk of alpha-Fe). We argue that the observed enhancement of conduction relates to the mixed oxide/oxyhydroxide (FeO/FeOOH) layer formed naturally on the top of our alpha-Fe films. This provides an explanation for the magnetization switching upon discharging a capacitor in terms of the Oersted field generated by the discharge current. We analyze the ratio needed between the conductions of the FeO/FeOOH layer and the underlying alpha-Fe for the effective action of the Oersted field.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5