Origin of the lattice sites occupied by implanted Co in Si

• Type: Article in International Scientific Journal
• Date: 2014

Authors

Silva, DJ (Author) Other; Wahl, U (Author) Other; Correia, JG (Author) Other; Pereira, LMC (Author) Other; Amorim, LM (Author) Other; da Silva, MR (Author) Other; araujo, j. p. (Author) FCUP

Journal

Title: Semiconductor Science and Technology

Vol. 29

Final page: 125006

ISSN: 0268-1242

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 4 Citations

Other information

Authenticus ID: P-00A-0YK

DOI: 10.1088/0268-1242/29/12/125006

Abstract (EN): We have investigated the lattice location of implanted Co-61 in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. To assess the origin of the observed lattice sites we have compared our results to emission channeling studies on Fe-59 and Ni-65 and to Mossbauer spectroscopy experiments on Co-57, present in literature. The possible interpretation of several Co-57 Mossbauer lines is discussed in the light of our new results on the Co-61 lattice location. The conclusions are relevant for the microscopic understanding of some gettering techniques.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5