Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 thin films

• Type: Article in International Scientific Journal
• Date: 2016

Authors

Silva, JPB (Author) Other; Kamakshi, K (Author) Other; Sekhar, KC (Author) Other; Queiros, EC (Author) Other; Agostinho Moreira, JA (Author) FCUP; Almeida, A (Author) FCUP; Pereira, M (Author) Other; Tavares, PB (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Journal of Physics D: Applied Physics

Vol. 49

Final page: 335301

ISSN: 0022-3727

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 19 Citations

Scopus - 19 Citations

Other information

Authenticus ID: P-00K-V4H

DOI: 10.1088/0022-3727/49/33/335301

Abstract (EN): In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm(-2) have shown optimal ferroelectric and resistive switching response, which are attributed to high tetragonality, large grain size and less defect concentration. Au/0.5BZT-0.5BCT/Pt capacitors show the electroforming free resistive switching that is explained based on the polarization modulation of the Schottky-like barrier at the 0.5BZT-0.5BCT/Au interface. The polarization induced resistive switching is evidenced by its disappearance as the temperature increases to the Curie temperature. The capacitor based on film grown at 5.5 J cm(-2) shows resistive switching characterized by high switching ratio of 10(6) at a low set/reset voltage approximate to 1 V, and by a stable memory window, which are highly required for memory applications.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9