Light-controlled resistive switching in laser-assisted annealed Ba0.8Sr0.2TiO3 thin films

• Type: Article in International Scientific Journal
• Date: 2016

Authors

Agostinho Moreira, JA (Author) FCUP; Almeida, A (Author) FCUP; José P. B. Silva (Author) Other; Koppole Kamakshi (Author) Other; Koppole C. Sekhar (Author) Other; Mário Pereira (Author) Other; Maria J. M. Gomes (Author) Other

Journal

Title: Physica Status Solidi (A) Applications and Materials

Vol. 213

Pages: 1082-1087

ISSN: 1862-6300

Publisher: Wiley-Blackwell

Indexing

ISI Web of Knowledge - 9 Citations

Scopus - 10 Citations

Scientific classification

CORDIS: Physical sciences > Physics

Other information

Authenticus ID: P-00K-FNE

DOI: 10.1002/pssa.201532636

Abstract (EN): In this work, Ba0.8Sr0.2TiO3 (BST)/ITO structures were grown on glass substrate and laser assisted annealing (LAA) was performed to promote the crystallization of BST. Atomic force microscopy and X-ray diffraction studies confirm the crack free and polycrystalline perovskite phase of BST. White light controlled resistive switching (RS) effect in Au/BST/ITO device is investigated. The device displays the electroforming-free bipolar RS characteristics and are explained by the modulation of the width and height of barrier at the BST/ITO interface via ferroelectric polarization. Moreover, the RS effect is significantly improved under white light illumination compared to that in the dark. The enhanced RS and photovoltaic effects are explained by considering depolarization field and charge distribution at the interface. The devices exhibit stable retention characteristics with low currents (A), which make them attractive for non volatile memory devices.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6