Tuning the Stoichiometry of Ag2S Thin Films for Resistive Switching Applications

• Type: Article in International Scientific Journal
• Date: 2016

Authors

Dias, C (Author) Other; proenca, m. p. (Author) FCUP; Fernandes, L (Author) Other; Tavares, PB (Author) Other; Vilarinho, R (Author) Other; Agostinho Moreira, JA (Author) FCUP; araujo, j. p. (Author) FCUP; ventura, j. (Author) FCUP

Journal

Title: Journal of Nanoscience and Nanotechnology

Vol. 16

Pages: 2608-2612

ISSN: 1533-4880

Publisher: American Scientific Publishers

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 4 Citations

Other information

Authenticus ID: P-00K-9BS

DOI: 10.1166/jnn.2016.10796

Abstract (EN): In this work silver-rich and sulfur-rich silver sulfide (Ag2S) thin films were fabricated using a diversified set of experimental methods, namely ion beam deposition and atmosphere-and solution-based sulfurizations. The composition of the Ag2S thin films was studied using X-ray diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. We found that it strongly depends on the fabrication conditions, such as sulfurization time and temperature. These conditions, in turn, affect the electrical characteristics of the thin films, namely the resistivity and resistive switching. We were able to control the Ag2S stoichiometry and infer its dependence on the fabrication parameters for all the followed methods.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5