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Surface Plasmon Resonance-Coupled Photoluminescence and Resistive Switching Behavior of Pulsed Laser-Deposited Ag:SiC Nanocermet Thin Films

Title
Surface Plasmon Resonance-Coupled Photoluminescence and Resistive Switching Behavior of Pulsed Laser-Deposited Ag:SiC Nanocermet Thin Films
Type
Article in International Scientific Journal
Year
2015
Authors
Kamakshi, K
(Author)
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Sekhar, KC
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Almeida, A
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Moreira, JA
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Gomes, MJM
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Journal
Title: PlasmonicsImported from Authenticus Search for Journal Publications
Vol. 10
Pages: 1211-1217
ISSN: 1557-1955
Publisher: Springer Nature
Other information
Authenticus ID: P-00G-29T
Abstract (EN): In this study, Ag:SiC nanocermets were prepared via rapid thermal annealing (RTA) of pulsed laser-deposited SiC/Ag/SiC trilayers grown on Si substrate. Atomic force microscope images show that silver nanoparticles (Ag NPs) are formed after RTA, and the size of NPs increases with increasing Ag deposition time (t (Ag)). Sharp dip observed in the reflectance spectra confirmed the existence of Ag surface plasmons (SPs). The infrared transmission spectra showed an intense and broad absorption band around 780-800 cm(-1) that can be assigned to Si-C stretching vibration mode. Influence of t (Ag) on the spectral characteristics of SP-enhanced photoluminescence (PL) and electrical properties of silicon carbide (SiC) films has been investigated. The maximum PL enhancement by 5.5 times for Ag:SiC nanocermets is achieved when t (Ag) a parts per thousand aEuro parts per thousand 50 s. This enhancement is due to the strong resonant coupling between SiC and the SP oscillations of the Ag NPs. Presence of Ag NPs in SiC also induces a forming-free resistive switching with switching ratio of 2 x 10(-2). The analysis of I-V curves demonstrates that the trap-controlled space-charge-limited conduction with filamentary model is the governing mechanism for the resistive switching in nanocerment thin films.
Language: English
Type (Professor's evaluation): Scientific
No. of pages: 7
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