A new physics based SPICE model for NPT IGBTs

• Type: Article in International Conference Proceedings Book
• Date: 2003

Authors

R. Chibante (Author) Other; Armando Araújo (Author) FEUP; Adriano da Silva Carvalho (Author) FEUP

Conference proceedings International

Title: IECON'03: THE 29TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1 - 3, PROCEEDINGS

Pages: 1156-1161

29th Annual Conference of the IEEE Industrial-Electronics-Society

Roanoke, VA, NOV 02-06, 2003

Indexing

ISI Web of Knowledge - 5 Citations

Scopus - 11 Citations

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

Other information

Authenticus ID: P-000-JTV

Abstract (EN): A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. Developed model results in a system of ODEs, from which time/space holetelectron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with one-dimensional simplex finite elements. Model implementation, in a circuit simulator, is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using standard methods. Thus, this new hybrid model combines advantages of numerical and mathematical methods, through modeling charge carrier behavior with high accuracy even maintaining low execution times.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6